Role of interatomic potentials in molecular dynamics simulations of silicon nanomachining

  • Yi-Fan Li ,
  • Liang-Chi Zhang
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  • 1. Shenzhen Key Laboratory of Cross-scale Manufacturing Mechanics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China;
    2. SUSTech Institute for Manufacturing Innovation, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China;
    3. Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China

Received date: 2024-03-16

  Revised date: 2024-05-12

  Online published: 2025-05-16

Supported by

The authors gratefully acknowledge the financial support from the National Natural Science Foundation of China Project (Grant No. 52293401), the Specific Discipline Project of Guangdong Province (Grant No. 2020ZDZX2006), and the Key Laboratory of Cross-Scale Manufacturing Mechanics Project of Shenzhen Municipality (Grant No.ZDSYS20200810171201007). The research was also supported by the High Level of Special Funds (Grant Nos. G0303200002, G03034K003) from Southern University of Science and Technology, Shenzhen, China.

Abstract

This investigation examines the impact of diverse interatomic potentials on the molecular dynamics simulation results of deformation and microstructural evolution during nanomachining. The results revealed that the application of the Stillinger-Weber (SW) potential led to the occurrence of significant stacking faults and dislocations. Conversely, the Tersoff potential prevented the initiation of dislocations during the loading segment. The Tersoff potential adept representation of the high-pressure phase transformation of monocrystalline silicon throughout the nanoindentation more accurately predicted mechanical parameters when compared with experimental data. Analytical bond-order potential (ABOP) accurately delineated the deformation mechanisms, including dislocation nucleation and amorphization, during nanoscratching. In contrast, the SW potential tended to underestimate the generation of high-pressure phases, with dislocation nucleation predicted by the SW potential dominating the plastic deformation of monocrystalline Si, contradicting the experimental observations. Consequently, this study concludes that the Tersoff potential and ABOP are the preferred choices for investigating the behavior of monocrystalline Si under nanomachining conditions.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-024-00544-7

Cite this article

Yi-Fan Li , Liang-Chi Zhang . Role of interatomic potentials in molecular dynamics simulations of silicon nanomachining[J]. Advances in Manufacturing, 2025 , 13(2) : 265 -283 . DOI: 10.1007/s40436-024-00544-7

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