Thermal plasma synthesis of SiC

doi:10.1007/s40436-013-0011-8

Advances in Manufacturing ›› 2013, Vol. 1 ›› Issue (1): 50-61.doi: 10.1007/s40436-013-0011-8

Thermal plasma synthesis of SiC

Muralidharan Ramachandran, Ramana G. Reddy

Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA

收稿日期:2012-07-06 出版日期:2012-03-01 发布日期:2012-03-01
基金资助:
Authors are pleased to acknowledge the financial support provided by ACIPCO, and the University of Alabama for this research work.

Thermal plasma synthesis of SiC

Muralidharan Ramachandran, Ramana G. Reddy

Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA

Received:2012-07-06 Online:2012-03-01 Published:2012-03-01
Supported by:
Authors are pleased to acknowledge the financial support provided by ACIPCO, and the University of Alabama for this research work.

摘要/Abstract

摘要： Synthesis of silicon carbide has been carried out using thermal plasma processing technique using SiO₂ as the solid feed and CH4 as the gaseous reducing agent. Thermochemical calculations have been performed varying the molar ratio of silicon dioxide and methane to determine the feasibility of the reaction. Experiments using a molar ratio of SiO2:CH4 equal to 1:2 produced maximum yield of SiC of about 65 mol % at a solid feed rate of 5 g/min.
Mostly spherical morphology with some nanorods has been observed. The presence of Si had been observed and was quantified using XRD, HRTEM, Raman spectroscopy and X-ray photoelectron microscopy (XPS). Si acts as a nucleating agent for SiC nanorods to grow.

关键词: Silicon carbide , Thermal plasma , High resolution transmission electron microscopy (HRTEM) , Raman spectroscopy , X-ray photoelectron microscopy
(XPS)

Abstract: Synthesis of silicon carbide has been carried out using thermal plasma processing technique using SiO₂ as the solid feed and CH4 as the gaseous reducing agent. Thermochemical calculations have been performed varying the molar ratio of silicon dioxide and methane to determine the feasibility of the reaction. Experiments using a molar ratio of SiO2:CH4 equal to 1:2 produced maximum yield of SiC of about 65 mol % at a solid feed rate of 5 g/min.
Mostly spherical morphology with some nanorods has been observed. The presence of Si had been observed and was quantified using XRD, HRTEM, Raman spectroscopy and X-ray photoelectron microscopy (XPS). Si acts as a nucleating agent for SiC nanorods to grow.

Key words: Silicon carbide , Thermal plasma , High resolution transmission electron microscopy (HRTEM) , Raman spectroscopy , X-ray photoelectron microscopy
(XPS)

Muralidharan Ramachandran, Ramana G. Reddy. Thermal plasma synthesis of SiC[J]. Advances in Manufacturing, 2013, 1(1): 50-61.

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Thermal plasma synthesis of SiC

Thermal plasma synthesis of SiC

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