Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method

doi:10.1007/s40436-021-00374-x

Advances in Manufacturing ›› 2022, Vol. 10 ›› Issue (1): 59-71.doi: 10.1007/s40436-021-00374-x

Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method

Hao-Jie An¹, Jin-Shi Wang¹, Feng-Zhou Fang^1,2

1 State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of MicroNano Manufacturing Technology (MNMT), Tianjin University, Tianjin, 300072, People's Republic of China;
2 Centre of MicroNano Manufacturing Technology (MNMT-Dublin), School of Mechanical and Materials Engineering, University College Dublin, Dublin 4, Ireland

收稿日期:2021-07-16 修回日期:2021-09-05 出版日期:2022-03-25 发布日期:2022-02-23
通讯作者: Jin-Shi Wang, Feng-Zhou Fang E-mail:jswang@tju.edu.cn;fzfang@tju.edu.cn
基金资助:
This study was supported financially by the National Natural Science Foundation (Grant No. 52035009) and the ‘111’ project of the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014). Thanks to Shan Wu and Yan Xu for the discussions.

Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method

Hao-Jie An¹, Jin-Shi Wang¹, Feng-Zhou Fang^1,2

1 State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of MicroNano Manufacturing Technology (MNMT), Tianjin University, Tianjin, 300072, People's Republic of China;
2 Centre of MicroNano Manufacturing Technology (MNMT-Dublin), School of Mechanical and Materials Engineering, University College Dublin, Dublin 4, Ireland

Received:2021-07-16 Revised:2021-09-05 Online:2022-03-25 Published:2022-02-23
Contact: Jin-Shi Wang, Feng-Zhou Fang E-mail:jswang@tju.edu.cn;fzfang@tju.edu.cn
Supported by:
This study was supported financially by the National Natural Science Foundation (Grant No. 52035009) and the ‘111’ project of the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014). Thanks to Shan Wu and Yan Xu for the discussions.

摘要/Abstract

摘要： Extreme ultraviolet (EUV) light plays an important role in various fields such as material characterization and semiconductor manufacturing. It is also a potential approach in material fabrication at atomic and close-to-atomic scales. However, the material removal mechanism has not yet been fully understood. This paper studies the interaction of a femtosecond EUV pulse with monocrystalline silicon using molecular dynamics (MD) coupled with a two-temperature model (TTM). The photoionization mechanism, an important process occurring at a short wavelength, is introduced to the simulation and the results are compared with those of the traditional model. Dynamical processes including photoionization, atom desorption, and laser-induced shockwave are discussed under various fluencies, and the possibility of single atomic layer removal is explored. Results show that photoionization and the corresponding bond breakage are the main reasons of atom desorption. The method developed can be further employed to investigate the interaction between high-energy photons and the material at moderate fluence.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-021-00374-x

关键词: Extreme ultraviolet (EUV), Molecular dynamics (MD), Two-temperature model (TTM), Photoionization, Atomic and close-to-atomic scale manufacturing (ACSM)

Abstract: Extreme ultraviolet (EUV) light plays an important role in various fields such as material characterization and semiconductor manufacturing. It is also a potential approach in material fabrication at atomic and close-to-atomic scales. However, the material removal mechanism has not yet been fully understood. This paper studies the interaction of a femtosecond EUV pulse with monocrystalline silicon using molecular dynamics (MD) coupled with a two-temperature model (TTM). The photoionization mechanism, an important process occurring at a short wavelength, is introduced to the simulation and the results are compared with those of the traditional model. Dynamical processes including photoionization, atom desorption, and laser-induced shockwave are discussed under various fluencies, and the possibility of single atomic layer removal is explored. Results show that photoionization and the corresponding bond breakage are the main reasons of atom desorption. The method developed can be further employed to investigate the interaction between high-energy photons and the material at moderate fluence.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-021-00374-x

Key words: Extreme ultraviolet (EUV), Molecular dynamics (MD), Two-temperature model (TTM), Photoionization, Atomic and close-to-atomic scale manufacturing (ACSM)

Hao-Jie An, Jin-Shi Wang, Feng-Zhou Fang. Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method[J]. Advances in Manufacturing, 2022, 10(1): 59-71.

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Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method

Material removal at atomic and close-to-atomic scale by high-energy photon:a case study using atomistic-continuum method

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