Global optimization of process parameters for low-temperature SiNx based on orthogonal experiments

doi:10.1007/s40436-022-00423-z

Advances in Manufacturing ›› 2023, Vol. 11 ›› Issue (2): 181-190.doi: 10.1007/s40436-022-00423-z

• ARTICLES •

Global optimization of process parameters for low-temperature SiN_x based on orthogonal experiments

Lian-Qiao Yang^1,2, Chi Zhang^1,2, Wen-Lei Li³, Guo-He Liu³, Majiaqi Wu^1,2, Jin-Qiang Liu³, Jian-Hua Zhang^1,2

1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, People's Republic of China;
2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People's Republic of China;
3. Huawei Technologies Co., Ltd, Shanghai, 200120, People's Republic of China

收稿日期:2022-07-01 修回日期:2022-08-14 发布日期:2023-05-20
通讯作者: Jian-Hua Zhang,E-mail:jhzhang@oa.shu.edu.cn E-mail:jhzhang@oa.shu.edu.cn
作者简介:Lian?Qiao Yang was born in Hebei, China, in 1979. She received the B.S. degree from Wuhan University, Wuhan, China, in 2004, and the M.S. and Ph.D. degrees from Myongji University, Seoul, Korea, in 2006 and 2009, respectively. She joined Shanghai University, Shanghai, China, in 2009. Her current research interests include thermal management of optoelectronics and development of advanced materials..
Chi Zhang was born in Anhui, China, in 1997. She graduated from Changzhou [7] University with a B.E. degree in 2020. She is now a master's student in the School of Materials Science and Engineering, Shanghai University, conducting research under the supervision of Associate Researcher Lianqiao Yang. She is mainly engaged in the research of flexible and micro-nano manufacturing.
Wen?Lei Li is currently working as a process engineer at Huawei Technologies Co., Ltd.
Guo?He Liu is currently working as a process engineer at Huawei Technologies Co., Ltd, responsible for AMOLED process improvement and new process development.
Majiaqi Wu was born in Zhejiang, China, on September 15, 1996. A second-year master's student at the School of Microelectronics, Shanghai University, Shanghai, China. He works at the Key Laboratory of Advanced Display and System Applications of Ministry of Education. His current research focuses on mechanical properties of inorganic thin films on flexible substrates.
Jin?Qiang Liu is currently working as a process engineer at Huawei Technologies Co., Ltd.
Jian?Hua Zhang is a professor of photoelectronic and mechanical engineering with Shanghai University, Shanghai, China. She is the Head of the Light-Emitting Diode (LED) and Organic LightEmitting Diode (OLED) Center, and the Director of the Key Laboratory for Advance Display Technology and System Applications, Ministry of Education, China. Her current research interests include high-power LEDs, OLED devices, and thin flm technology.
基金资助:
This work was financially supported by the National Key Research and Development Program of China (Grant No. 2020YFB2008501) and Huawei Technologies Co., Ltd.

Global optimization of process parameters for low-temperature SiN_x based on orthogonal experiments

Lian-Qiao Yang^1,2, Chi Zhang^1,2, Wen-Lei Li³, Guo-He Liu³, Majiaqi Wu^1,2, Jin-Qiang Liu³, Jian-Hua Zhang^1,2

1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, People's Republic of China;
2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People's Republic of China;
3. Huawei Technologies Co., Ltd, Shanghai, 200120, People's Republic of China

Received:2022-07-01 Revised:2022-08-14 Published:2023-05-20
Contact: Jian-Hua Zhang,E-mail:jhzhang@oa.shu.edu.cn E-mail:jhzhang@oa.shu.edu.cn
Supported by:
This work was financially supported by the National Key Research and Development Program of China (Grant No. 2020YFB2008501) and Huawei Technologies Co., Ltd.

摘要/Abstract

摘要： Low-temperature silicon nitride (SiN_x) films deposited by plasma-enhanced chemical vapor deposition (PECVD) have huge application potential in the flexible display. However, the applicability of SiN_x largely depends on the film’s general properties, including flexibility, deposition rate, residual stress, elastic modulus, fracture strain, dielectric constant, refraction index, etc. Process optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process parameters. Therefore, an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor muti-responses. First of all, the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics, including radio frequency (RF) power, pressure, silane flow rate, ammonia flow rate and nitrogen flow rate. Then, the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate, residual stress, dielectric constant, elastic modulus, fracture strain, refractive index. Finally, the optimal solution of the SiN_x film was finally obtained and verified.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-022-00423-z

关键词: Plasma-enhanced chemical vapor deposition (PECVD), Low-temperature silicon nitride (SiN_x), Flexible display, Taguchi orthogonal experiment, Process optimization

Abstract: Low-temperature silicon nitride (SiN_x) films deposited by plasma-enhanced chemical vapor deposition (PECVD) have huge application potential in the flexible display. However, the applicability of SiN_x largely depends on the film’s general properties, including flexibility, deposition rate, residual stress, elastic modulus, fracture strain, dielectric constant, refraction index, etc. Process optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process parameters. Therefore, an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor muti-responses. First of all, the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics, including radio frequency (RF) power, pressure, silane flow rate, ammonia flow rate and nitrogen flow rate. Then, the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate, residual stress, dielectric constant, elastic modulus, fracture strain, refractive index. Finally, the optimal solution of the SiN_x film was finally obtained and verified.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-022-00423-z

Key words: Plasma-enhanced chemical vapor deposition (PECVD), Low-temperature silicon nitride (SiN_x), Flexible display, Taguchi orthogonal experiment, Process optimization

Lian-Qiao Yang, Chi Zhang, Wen-Lei Li, Guo-He Liu, Majiaqi Wu, Jin-Qiang Liu, Jian-Hua Zhang. Global optimization of process parameters for low-temperature SiN_x based on orthogonal experiments[J]. Advances in Manufacturing, 2023, 11(2): 181-190.

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Global optimization of process parameters for low-temperature SiN_x based on orthogonal experiments

Global optimization of process parameters for low-temperature SiN_x based on orthogonal experiments

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