Nanometric polishing of lutetium oxide by plasma-assisted etching

doi:10.1007/s40436-020-00324-z

Advances in Manufacturing ›› 2020, Vol. 8 ›› Issue (4): 440-446.doi: 10.1007/s40436-020-00324-z

• ARTICLES • 上一篇

Nanometric polishing of lutetium oxide by plasma-assisted etching

Peng Lyu¹, Min Lai¹, Feng-Zhou Fang^1,2

1 State Key Laboratory of Precision Measuring Technology and Instruments, Centre of Micro/Nano Manufacturing Technology(MNMT), Tianjin University, Tianjin 300072, People's Republic of China;
2 Centre of Micro/Nano Manufacturing Technology(MNMTDublin), School of Mechanical and Materials Engineering, University College Dublin, Dublin 4, Ireland

收稿日期:2020-01-30 修回日期:2020-07-10 发布日期:2020-12-07
通讯作者: Min Lai, Feng-Zhou Fang E-mail:laimin@tju.edu.cn;fzfang@tju.edu.cn
基金资助:
This work was supported by the National Key Research & Development Program (Grant No. 2016YFB1102203), the National Natural Science Foundation of China (Grant No. 61635008), the “111” project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014), and the National Science Fund for Distinguished Young Scholars (Grant No. 51605327).

Nanometric polishing of lutetium oxide by plasma-assisted etching

Peng Lyu¹, Min Lai¹, Feng-Zhou Fang^1,2

1 State Key Laboratory of Precision Measuring Technology and Instruments, Centre of Micro/Nano Manufacturing Technology(MNMT), Tianjin University, Tianjin 300072, People's Republic of China;
2 Centre of Micro/Nano Manufacturing Technology(MNMTDublin), School of Mechanical and Materials Engineering, University College Dublin, Dublin 4, Ireland

Received:2020-01-30 Revised:2020-07-10 Published:2020-12-07
Contact: Min Lai, Feng-Zhou Fang E-mail:laimin@tju.edu.cn;fzfang@tju.edu.cn
Supported by:
This work was supported by the National Key Research & Development Program (Grant No. 2016YFB1102203), the National Natural Science Foundation of China (Grant No. 61635008), the “111” project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014), and the National Science Fund for Distinguished Young Scholars (Grant No. 51605327).

摘要/Abstract

摘要： Plasma-assisted etching, in which the irradiation of hydrogen plasma and inorganic acid etching are integrated, is proposed as a novel polishing method for sesquioxide crystals. By means of this approach, low damage and even damage-free surfaces with a high material removal rate can be achieved in lutetium oxide surface finishing. Analysis of transmission electron microscopy and X-ray photoelectron spectroscopy reveal that plasma hydrogenation converts the sesquioxide into hydroxide, which leads a high efficient way to polish the surfaces. The influences of process conditions on the etching boundary and surface roughness are also qualitatively investigated using scanning electron microscope and white light interferometry. The newly developed process is verified by a systematic experiment.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-020-00324-z

关键词: Plasma-assisted etching, Lutetium oxide, Surface roughness, Subsurface damage

Abstract: Plasma-assisted etching, in which the irradiation of hydrogen plasma and inorganic acid etching are integrated, is proposed as a novel polishing method for sesquioxide crystals. By means of this approach, low damage and even damage-free surfaces with a high material removal rate can be achieved in lutetium oxide surface finishing. Analysis of transmission electron microscopy and X-ray photoelectron spectroscopy reveal that plasma hydrogenation converts the sesquioxide into hydroxide, which leads a high efficient way to polish the surfaces. The influences of process conditions on the etching boundary and surface roughness are also qualitatively investigated using scanning electron microscope and white light interferometry. The newly developed process is verified by a systematic experiment.

The full text can be downloaded at https://link.springer.com/article/10.1007/s40436-020-00324-z

Key words: Plasma-assisted etching, Lutetium oxide, Surface roughness, Subsurface damage

Peng Lyu, Min Lai, Feng-Zhou Fang. Nanometric polishing of lutetium oxide by plasma-assisted etching[J]. Advances in Manufacturing, 2020, 8(4): 440-446.

参考文献

1. Chan VWS (2002) Optical space communications. IEEE J Sel Top Quantum Electron 6:959-975
2. Taczak TM, Killinger DK (1998) Development of a tunable, narrow-linewidth, cw 2.066-lm Ho:YLF laser for remote sensing of atmospheric CO₂ and H₂O. Appl Opt 37:8460-8476
3. Gattass RR, Mazur E (2008) Femtosecond laser micromachining in transparent materials. Nat Photonics 2:219-225
4. Flock ST, Stern T, Lehman P et al (1997) Er:YAG laser-induced changes in skin in vivo and transdermal drug delivery. Proc SPIE Int Soc Opt Eng 2970:374-379
5. Boulnois JL (1986) Photophysical processes in recent medical laser developments:a review. Lasers Med Sci 1:47-66
6. Weber MJ (1968) Radiative and multiphonon relaxation of rareearth ions in Y₂O₃. Phys Rev 171:283-291
7. Petermann K, Huber G, Fornasiero L et al (2000) Rare-earthdoped sesquioxides. J Lumin 87:973-975
8. Koopmann P, Lamrini S, Scholle K et al (2011) Multi-watt laser operation and laser parameters of Ho-doped Lu₂O₃ at 2.12 lm. Opt Mater Express 1:1447-1456
9. Fornasiero L, Mix E, Peters V et al (1999) New oxide crystals for solid state lasers. Cryst Res Technol 34:255-260
10. Boulon G (2003) Yb³⁺ doped oxide crystals for diode-pumped solid state lasers:crystal growth, optical spectroscopy, new criteria of evaluation and combinatorial approach. Opt Mater 22:85-87
11. Peters V, Bolz A, Petermann K et al (2002) Growth of highmelting sesquioxides by the heat exchanger method. J Cryst Growth 237:879-883
12. Mun JH, Novoselov A, Yoshikawa A et al (2005) Growth of Yb³⁺-doped Y₂O₃ single crystal rods by the micro-pulling-down method. Mater Res Bull 40:1235-1243
13. Fang FZ, Zhang N, Guo D et al (2019) Towards atomic and close-to-atomic scale manufacturing. Int J Extreme Manuf 1:012001
14. Fang FZ (2020) Atomic and close-to-atomic scale manufacturing:perspectives and measures. Int J Extreme Manuf 2:030201
15. Li C, Wu Y, Li X et al (2019) Deformation characteristics and surface generation modelling of crack-free grinding of GGG single crystals. J Mater Process Technol 279:116577
16. Fang FZ, Xu F (2018) Recent advances in micro/nano-cutting:effect of tool edge and material properties. Nanomanuf Metrol 1:4-31
17. Nagano M, Yamaga F, Zettsu N et al (2011) Development of fabrication process for aspherical neutron focusing mirror using numerically controlled local wet etching with low-pressure polishing. Nucl Instrum Methods Phys Res 634:112-116
18. Namba Y, Tsuwa H (1977) Ultrafine finishing of sapphire single crystal. CIRP Ann 26:325-329
19. Mori Y, Yamauchi K, Endo K (1987) Elastic emission machining. Precis Eng 9:123-128
20. Gormley J, Manfra M, Calawa A (1991) Hydroplane polishing of semiconductor crystals. Rev Sci Instrum 52:1256-1259
21. Li ZJ, Qin Z, Zhou ZH et al (2009) SnO₂ nanowire arrays and electrical properties synthesized by fast heating a mixture of SnO₂ and CNTs waste soot. Nanoscale Res Lett 4:1434-1438
22. Kordonski VW, Golini D, Dumas P et al (1998) Magnetorheological-suspension-based finishing technology. Proc SPIE-Int Soc Opt Eng 3326:527-535
23. Yang X, Yang XZ, Sun RY et al (2019) Obtaining atomically smooth 4H-SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing. Nanomanuf Metrol 2:140-147
24. Arnold T, Böhm G, Fechner R et al (2010) Ultraprecision surface finishing by ion beam and plasma jet techniques-status and outlook. Nucl Instrum Methods Phys Res B 616:147-156
25. Sun RY, Yang X, Watanabe K et al (2019) Etching characteristics of quartz crystal wafers using argon-based atmospheric pressure CF₄ plasma stabilized by ethanol addition. Nanomanuf Metrol 2:168-176
26. Yamamura K, Takiguchi T, Ueda M et al (2011) Plasma assisted polishing of single crystal SiC for obtaining atomically flat strainfree surface. CIRP Ann Manuf Technol 60:571-574
27. Mondal S, Her JL, Koyama K et al (2014) Resistive switching behavior in Lu₂O₃ thin film for advanced flexible memory applications. Nanoscale Res Lett 9:3
28. Espinós JP, González-Elipe AR, Odriozola JA (1987) XPS study of lutetium oxide samples with different hydration/carbonation degrees as a function of the preparation method. Appl Surf Sci 29:40-48
29. Päiväsaari J (2007) Atomic layer deposition of rare earth oxides. Top Appl Phys 106:15-32
30. Pan TM, Lin CW (2011) Structural and sensing properties of high-k Lu₂O₃ electrolyte-insulator-semiconductor pH sensors. J Electrochem Soc 158:J96
31. Fukushima Y, Ikoma Y, Edalati K et al (2017) High-resolution transmission electron microscopy analysis of bulk nanograined silicon processed by high-pressure torsion. Mater Charact 129:163-168
32. Knoop LD, Kuisma MJ, Löfgren J et al (2019) Electric fieldinduced surface melting of gold observed in situ at room temperature and at atomic resolution using TEM. Microsc Microanal 25:1830-1831
33. Gan Z, Hu G, Peng Z et al (2019) Surface modification of LiNi_0.8Co_0.1Mn_0.1O₂ by WO₃ as a cathode material for LIB. Appl Surf Sci 481:1228-1238
34. Ubaldini A, Carnasciali MM (2008) Raman characterisation of powder of cubic RE₂O₃ (RE=Nd, Gd, Dy, Tm, and Lu), Sc₂O₃ and Y₂O₃. J Alloys Compd 454:374-378

[1]	Wei Han, Feng-Zhou Fang. Investigation of electropolishing characteristics of tungsten in ecofriendly sodium hydroxide aqueous solution[J]. Advances in Manufacturing, 2020, 8(3): 265-278.
[2]	Mirsadegh Seyedzavvar, Hossein Abbasi, Mehdi Kiyasatfar, Reza Najati Ilkhchi. Investigation on tribological performance of CuO vegetable-oil based nanofluids for grinding operations[J]. Advances in Manufacturing, 2020, 8(3): 344-360.
[3]	Wei Zhao, Asif Iqbal, Ding Fang, Ning He, Qi Yang. Experimental study on the meso-scale milling of tungsten carbide WC-17.5Co with PCD end mills[J]. Advances in Manufacturing, 2020, 8(2): 230-241.
[4]	Yong Zhang, Ning Hou, Liang-Chi Zhang. Understanding the formation mechanism of subsurface damage in potassium dihydrogen phosphate crystals during ultraprecision fly cutting[J]. Advances in Manufacturing, 2019, 7(3): 270-277.
[5]	Ramanuj Kumar, Ashok Kumar Sahoo, Purna Chandra Mishra, Rabin Kumar Das. Comparative investigation towards machinability improvement in hard turning using coated and uncoated carbide inserts: part I experimental investigation[J]. Advances in Manufacturing, 2018, 6(1): 52-70.
[6]	Ravindra Nath Yadav. Development and experimental investigation of duplex turning process[J]. Advances in Manufacturing, 2017, 5(2): 149-157.
[7]	A. Pramanik, A. R. Dixit, S. Chattopadhyaya, M. S. Uddin, Yu Dong, A. K. Basak, G. Littlefair. Fatigue life of machined components[J]. Advances in Manufacturing, 2017, 5(1): 59-76.
[8]	Vedat Savas, Cetin Ozay, Hasan Ballikaya. Experimental investigation of cutting parameters in machining of 100Cr6 with tangential turn-milling method[J]. Advances in Manufacturing, 2016, 4(1): 97-104.
[9]	Satyanarayana Kosaraju Venu Gopal Anne. Optimal machining conditions for turning Ti-6Al-4V using response surface methodology[J]. Advances in Manufacturing, 2013, 1(4): 329-339.

Nanometric polishing of lutetium oxide by plasma-assisted etching

Nanometric polishing of lutetium oxide by plasma-assisted etching

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 9

编辑推荐

Metrics

本文评价